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In this paper, we present an analysis for treating the spectroscopicellipsometry response of Si/Ge superlattices (SL) with embedded Ge dots.Spectroscopic ellipsometry (SE) measurement at room temperature was used toinvestigate optical and electronic properties of Si/Ge SL which were grown onsilicon (Si) wafers having <111> crystallographic orientation. The results ofthe SE analysis between 200 nm and 1000 nm indicate that the SL system caneffectively be described using interdiffusion/intermixing model by assuming amulticrystalline Si and Si1-xGex intermixing layers. The electronic transitionsdeduced from analysis reveal Si, Ge and alloying related critical energypoints.

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots