English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6)Field Effect Transistors (FETs) has been investigated. T6 FETs have beenfabricated by vacuum depositing films with thickness from 10 nm to 130 nm onSi/SiO2 substrates. After the T6 film structural analysis by X-Ray diffractionand the FET electrical investigation focused on carrier mobility evaluation,bias stress instability parameters have been estimated and discussed in thecontext of existing models. By increasing the film thickness, a clearcorrelation between the stress parameters and the structural properties of theorganic layer has been highlighted. Conversely, the mobility values resultalmost thickness independent.

Organic film thickness influence on the bias stress instability in Sexithiophene Field Effect Transistors