English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Tantalum nitride thin films have been grown by in situ nitrogen implantationof metallic tantalum at room temperature over the energy range of 0.5-5keV.X-ray photoelectron spectroscopy (XPS) and Factor Analysis (FA) have been usedto characterise the chemical composition of the films. The number of thedifferent Ta-N phases formed during nitrogen implantation, as well as theirspectral shape and concentrations, have been obtained using principal componentanalysis (PCA) and iterative target transformation factor analysis (ITTFA),without any prior assumptions. According to FA results, the composition of thetantalum nitride films depends on both the ion dose and ion energy, and ismainly formed by a mixture of metallic tantalum, beta-TaN0.05, gamma-Ta2N andcubic/hexagonal TaN phases.Comment: 24 pages, 5 figures submitted to Applied Physics

Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4 f XPS core level