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We present experimental and modeling studies of UV nanosecond pulsed laserdesorption and ablation of (111) bulk silicon. The results involve a newapproach to the analysis of plume formation dynamics under high-energy photonirradiation of the semiconductor surface. Non-thermal, photo-induced desorptionhas been observed at low laser fluence, well below the melting threshold. Underablation conditions, the non-thermal ions have also a high concentration. Theorigin of these ions is discussed on the basis of electronic excitation of Sisurface states associated with the Coulomb explosion mechanism. We present amodel describing dynamics of silicon target excitation, heating andharge-carrier transport

Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling