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Sequentially-deposited layers of Cu/BaF2/Y on buffered Si and SrTiO3 substrates have been synthesised to produce YBa2Cu3O7−δ thin film. An attempt has been made to see the effect of the ZrO2 and Al buffer layers on Si of the annealing of the layered structure. X-ray diffraction studies reveal that on ZrO2-buffered Si the annealing of the layered structure leads to formation of 211 phase while on Al-buffer layer 123 phase is obtained. Noticeable effect in annealed-layered structure of oblique deposition of BaF2 from a Knudson Cell is seen in X-ray diffraction.

Synthesis of sequentially-deposited Cu/BaF2/Y films on SrTiO3 and buffered Si substrates