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Silicon dioxide films on strained Si1−x Ge x  have been deposited by electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition technique using tetraethylorthosilicate (TEOS) at room temperature. The deposition rate as a function of time and substrate temperature has been studied. MOS capacitors fabricated using deposited oxides have been used to characterize the electrical properties of silicon dioxide films. Deposited oxide film shows its suitability for microelectronic applications.

Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate