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Polycrystalline silicon and zinc oxide ceramic are important electronic materials. The electrical properties which determine the applications of polycrystalline silicon in integrated circuits and solar cells and that of ZnO ceramic in varistors are due primarily to grain boundary effects in them. A large amount of information in this area has already been gathered in literature but the quantitative understanding of grain boundary effects in these materials is not yet complete. In this review the important aspects of grain boundaries and their effects on transport and photoelectric properties of polycrystalline silicon and on the I–V characteristic of ZnO varistors are discussed.

Electrical properties of polycrystalline silicon and zinc oxide semiconductors