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High dielectric constant (high-k) Ta2O5films have been deposited on ZnO/p-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/p-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/p-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler-Nordheim (F-N) constant current stressing.

Electrical properties of Ta2O5 films deposited on ZnO