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Growth of Hg1-xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitance-voltage (C-V) measurements.

Growth and characterization of Hg1-xCdxTe epitaxial films by isothermal vapour phase epitaxy (ISOVPE)