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Formation of silicon oxynitride was observed during silicon nitride whisker synthesis from silica, carbon and nitrogen. The silicon oxynitride formation was limited to a bottom area of the charged powders and found both in whisker and powder. The possible reason for this localized Si 2 N 2 O formation is analysed, based on the effect of gas phase composition on the phase stability among β-Si 3 N 4 , β-SiC and Si 2 N 2 O. The phase stability is closely related to the ratio in the gas phase. To suppress Si 2 N 2 O formation, the ratio must be lower than that of the phase boundary in the Si 2 N 4 /Si 2 N 2 O equilibrium, whereas it must be higher than that of the phase boundary in the SiC/Si 2 N 2 O equilibrium. The formation of silicon oxynitride during silicon nitride whisker formation was caused most likely by fluctuation in the ratio in the gas phase surrounding the lower area

Effect of gas composition on Si2N2O formation in the Si-C-N-O system