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The present chapter addresses several important topics in the framework of carrier transport in dilute nitride films, having a potential application in multijunction solar cells. Minority carrier devices are sensitive to carrier localization and trapping. Hence, in a complex material system like GaInNAs results of transport, optical and structural properties should be interpreted together to obtain a picture of the intrinsic and the growth-related properties of the material system. The metastable GaInNAs was grown as bulk layers on GaAs under nonequilibrium conditions at low temperatures by metal organic vapour phase epitaxy with high structural quality using all-liquid MO precursors. Results on doping with various elements and their transport properties, as determined by Hall-measurements in van der Pauw geometry as well as by magnetoresistance measurements are discussed. Because of the low growth temperature, the post-growth annealing procedure is of key importance to establish optoelectronic properties in these metastable dilute N-containing materials with improved device performance via removing of defects. These defects are – if not removed – shown to have a significant influence on minority carrier devices like solar cells. The annealing conditions were varied systematically and the related changes in the microstructural N-environment were quantified. In addition, the correlation of these characteristics with improvements in 1 eV solar cell performance is established.

Doping, Electrical Properties and Solar Cell Application of GaInNAs