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We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasing number of quantum dot layers while other relevant GaN related spectral features are much less intensive when compared to the photoluminescence of a single quantum dot layer. The quantum dot character of the active material is verified by microphotoluminescence experiments at different temperatures. For the possible integration within optical devices in the future the threshold power density was investigated as well as the modal gain by using the variable stripe length method. As the threshold is 670 kW/cm 2  at 13 K, the modal gain maximum is at 50 cm –1 . In contrast to these limited total values, the modal gain per quantum dot is as high as 10 –9 cm –1 , being comparable to the IIVI and III‐As compounds. These results are a promising first step towards bright low threshold InGaN quantum dot based light emitting devices in the near future (© 2009 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

Optical properties and modal gain of InGaN quantum dot stacks