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The synthesis of self‐organized quantum dots (QD's) can be achieved through bottom up layer by layer deposition processes as chemical vapor deposition (CVD) or physical vapor deposition (PVD). However, QD's may also be synthesized via sol‐gel route, which involves a spontaneous evolution from thin films to discrete QD's without further deposition. The aim of the paper is to discuss and compare the physical phenomena involved in QD's formation which initiate from thin film surface roughening between PVDCVD and sol‐gel synthesis approaches. We propose two simple physical models which are relevant to explain the fundamental differences between those methods. (© 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

Comparison between models of insulator and semiconductor thin films islanding