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Metal halide perovskite based materials have emerged over the past few decades as remarkable solution‐processable optoelectronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low‐energy memory and information processing applications. In particular, their large optical cross‐sections, high photoconductance contrast, large carrier‐diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality is reviewed.

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices