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Ferromagnetic semiconductors discovered in two-dimensional (2D) materialsopen an avenue for highly integrated and multifunctional spintronics. The Curietemperature (TC) of existed 2D ferromagnetic semiconductors is extremely lowand the modulation effect of their magnetism is limited compared with their 2Dmetallic counterparts. The interfacial effect was found to effectivelymanipulate the three-dimensional magnetism, providing a unique opportunity fortailoring the 2D magnetism. Here we demonstrate that the TC of 2D ferromagneticsemiconductor Cr2Ge2Te6 can be enhanced by 130% (from ~65 K to above 150 K)when adjacent to a tungsten layer. The interfacial W-Te bonding contributes tothe TC enhancement with a strong perpendicular magnetic anisotropy (PMA),guaranteeing an efficient magnetization switching by the spin-orbit torque witha low current density at 150 K. Distinct from the rapid attenuation inconventional magnets, the interfacial effect exhibits a weak dependence onCr2Ge2Te6 thickness and a long-distance effect (more than 10 nanometers) due tothe weak interlayer coupling inherent to 2D magnets. Our work not only revealsa unique interfacial behavior in 2D materials, but also advances the processtowards practical 2D spintronics.

Interface-enhanced ferromagnetism with long-distance effect in van der Waals semiconductor