English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Robust multi‐level spin memory with the ability to write information electrically is a long‐sought capability in spintronics, with great promise for applications. Here, nonvolatile and highly energy‐efficient magnetization switching is achieved in a single‐material device formed of van‐der‐Waals (vdW) topological ferromagnet Fe 3 GeTe 2 , whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin‐orbit‐torque magnetic random access memory based on conventional magnet/heavy‐metal systems. Most importantly, multi‐level states, switched by electrical current are also demonstrated, which can dramatically enhance the information capacity density and reduce computing costs. Thus, the observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of vdW magnets in the field of spin memory and spintronics.

Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe 3 GeTe 2