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Technology and physics of discrete nanoscale electronic components are reasonably well understood, but there exists a gap between device physics and nanoelectronic circuit integration. In this paper, we propose a modelling and simulation technique for integrated circuits composed of Coulomb-coupled nanodevices and subcircuits of metal-contacted devices. We assume that the Coulomb-coupled devices are far enough apart from each other that the overlap between their wave functions can be ignored. The internal electronic dynamics of the devices are described by quantum Markovian master equations, describing the dynamics of the devices as irreversible evolution of an open quantum system coupled to reservoirs. The electronic state of the devices are characterized by a nite-dimensional time-varying real vector. The state of the nuclei is characterized by classical state variables such as position and momenta. The Coulomb eld generated by the device is described by the expectation value of the charge density approximated as multipole moments. Device–device couplings are determined by multipole interactions. In this way, the integrated circuit dynamics can be described by a set of coupled nonlinear di erential equations. This set of mixed quantum-classical state equations leads us to the introduction of equivalent circuits. We conclude that integrated circuits composed of Coulomb-coupled and metalcontacted nanodevices do have circuit representations, thus circuit theory can be applied to build device models, to simulate and to design nanoelectronic integrated circuits. Copyright ? 2001 John Wiley & Sons, Ltd.

Equivalent circuit representation of arrays composed of Coulomb coupled nanoscale devices: modelling, simulation and realizability