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We use real-time reflection high energy electron diffraction intensityoscillation to establish the Te-rich growth dynamics of topological insulatorthin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situangle resolved photoemission spectroscopy (ARPES), scanning tunnelingmicroscopy and ex situ transport measurements reveal that the as-grown Bi2Te3films without any doping are an intrinsic topological insulator with its Fermilevel intersecting only the metallic surface states. Experimentally, we findthat the single-Dirac-cone surface state develops at a thickness of twoquintuple layers (2 QL). Theoretically, we show that the interaction betweenthe surface states from both sides of the film, which is determined by thepenetration depth of the topological surface state wavefunctions, sets thislower thickness limit.

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si