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The paper presents an adaptive over-relaxation method for calculating theelectric potential and field intensity, for a complex tunnel transistorstructure involving a split gate and a shielding boundary. The accuracy andspeed of the method has been numerically tested and found satisfactory for thestudy of such devices by calculating the tunneling currents for the obtainedpotential distribution.

The calculus of the electric potential and field intensity in multiple electrodes lateral tunneling transistors with double gate