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Evidence of the absence of the clear electron spin-resonance signal from Gedangling bonds (DBs) at Ge/GeO$_2$ interfaces is explored by means offirst-principles electronic-structure calculations. Comparing the electronicstructures of the DBs at Si/SiO$_2$ and Ge/GeO$_2$ interfaces, we found thatthe electronic structure of the Ge-DB is markedly different from that of theSi-DB; the Ge-DB states does not position in the energy band gap of theGe/GeO$_2$ interface while the Si-DB states clearly appears. In addition, thecharge density distribution of the Ge-DB state spreads more widely than that ofthe Si-DB state. These features are explained by considering the metallicproperties of the bonding network of the Ge/GeO$_2$ interface and thestructural deformation of the Ge bulk at the Ge/GeO$_2$ interface due to thelattice-constant mismatch.

First-principles electronic-structure calculation of dangling bonds at Si/SiO$_2$ and Ge/GeO$_2$ interfaces