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Ti/Al multilayer thin films with precise thickness have been deposited usinga combination of dc and rf magnetron sputtering techniques. Cross-sectionaltransmission electron microscopy (TEM) revealed unmixed fifteen parallel andalternate layers of Ti and Al with sharp interfaces, each measuring 27 nm and15 nm in thickness, respectively. The Ti layer was composed of hcp and fccphases while the Al layer was fcc. Both x-ray diffraction (XRD) and selectedarea electron diffraction (SAED) analysis confirmed the identity of thesephases. Detection of fcc-Ti in as-deposited the Ti/Al multilayer thin film byXRD established that the fcc-Ti phase is not an artifact of TEM samplepreparation, as have been envisaged by some of the previous researchers. Thefcc-Ti phase appeared when dual rf guns were used for Ti deposition and thediffraction peak intensity corresponding to fcc phase increased when the gunpower was raised. A modified equation of state based thermodynamic analysisconfirmed that the formation of hcp phase as opposed to the thermodynamicallystable fcc phase of pure Ti is due to crystallite size reduction and notimpurity driven.

Face-centered-cubic titanium in Ti/Al multilayer thin films synthesized by magnetron sputtering technique