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We present a study of transport in graphene devices on polar insulatingsubstrates using a tight-binding model. The mobility is computed using amultiband Boltzmann treatment. We provide the scaling of the surface polarphonon contribution to the low-field mobility with carrier density,temperature, and distance from the substrate. At high bias, we find thatgraphene self-heating effect is essential to account for the observed saturatedcurrent behavior. We predict that by optimizing the device cooling, the highbias currents can be significantly enhanced.

Current Saturation and Surface Polar Phonon Scattering in Graphene