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Graphene was recently proposed as a material for heat removal owing to itsextremely high thermal conductivity. We simulated heat propagation insilicon-on-insulator circuits with and without graphene lateral heat spreaders.Numerical solutions of the heat propagation equations were obtained using thefinite element method. The analysis was focused on the prototypesilicon-on-insulator circuits with the metal-oxide-semiconductor field-effecttransistors. It was found that the incorporation of graphene or few-layergraphene layers with proper heat sinks can substantially lower the temperatureof the localized hot spots. The maximum temperature in the transistor channelswas studied as function of graphene's thermal conductivity and the thickness ofthe few-layer-graphene. The developed model and obtained results are importantfor the design of graphene heat spreaders and interconnects.

Graphene Heat Spreaders for Thermal Management of Nanoelectronic Circuits