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Charge resistance and spin torque are generated by coherent carrier transportthrough ferromagnetic 360 degree domain walls, although they followqualitatively different trends than for 180 degree domain walls. The chargeresistance of 360 degree domain walls reaches a maximum at an intermediate wallthickness, unlike 180 degree domain walls, whose resistance decreasesmonotonically with wall thickness. The peak amplitude of the spin torque andthe optimal thickness of the domain wall to maximize torque for a 360 degreewall are more than twice as large as found for a 180 degree domain wall in thesame material, producing a larger domain wall velocity for the 360 degree walland suggesting unexpected nonlinearities in magnetoelectronic devicesincorporating domain wall motion.

Spin torque and charge resistance of ferromagnetic semiconductor $2\pi$ and $\pi$ domain walls