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Homoepitaxial chemical vapour deposition (CVD) on high pressure hightemperature (HPHT) synthetic diamond substrates allows production of diamondmaterial with controlled point defect content. In order to minimize theextended defect content, however, it is necessary to minimize the number ofsubstrate extended defects that reach the initial growth surface and thenucleation of dislocations at the interface between the CVD layer and itssubstrate. X-ray topography has indicated that when type IIa HPHT syntheticsubstrates are used the density of dislocations nucleating at the interface canbe less than 400 cm-2. X-ray topography, photoluminescence imaging andbirefringence microscopy of HPHT grown synthetic type IIa diamond clearly showthat the extended defect content is growth sector dependent. <111> sectorscontain the highest concentration of both stacking faults and dislocations but<100> sectors are relatively free of both. It has been shown that HPHTtreatment of such material can significantly reduce the area of stacking faultsand cause dislocations to move. This knowledge, coupled with an understandingof how growth sectors develop during HPHT synthesis, has been used to guideselection and processing of substrates suitable for CVD synthesis of materialwith high crystalline perfection and controlled point defect content.

High crystalline quality single crystal CVD diamond