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In order to improve the performance of existing technologies based on singlecrystal diamond grown by chemical vapour deposition (CVD), and to open up newtechnologies in fields such as quantum computing or solid state andsemiconductor disc lasers, control over surface and bulk crystalline quality isof great importance. Inductively coupled plasma (ICP) etching using an Ar/Clgas mixture is demonstrated to remove sub-surface damage of mechanicallyprocessed surfaces, whilst maintaining macroscopic planarity and low roughnesson a microscopic scale. Dislocations in high quality single crystal CVD diamondare shown to be reduced by using substrates with a combination of low surfacedamage and low densities of extended defects. Substrates engineered such thatonly a minority of defects intersect the epitaxial surface are also shown tolead to a reduction in dislocation density. Anisotropy in the birefringence ofsingle crystal CVD diamond due to the preferential direction of dislocationpropagation is reported. Ultra low birefringence plates (< 10-5) are nowavailable for intra-cavity heat spreaders in solid state disc lasers, and theapplication is no longer limited by depolarisation losses. Birefringence ofless than 5*10-7 along a direction perpendicular to the CVD growth directionhas been demonstrated in exceptionally high quality samples.

Control of surface and bulk crystalline quality in single crystal diamond grown by chemical vapour deposition