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We perform a combined experimental and theoretical study oftetramethyltetraselenafulvalene (TMTSF) single-crystal field-effecttransistors, whose electrical characteristics exhibit clear signatures of theintrinsic transport properties of the material. We introduce a simple,well-defined model based on physical parameters and we successfully reproducequantitatively the device properties as a function of temperature and carrierdensity. The analysis allows its internal consistency to be checked, andenables the reliable extraction of the density and characteristic energy ofshallow and deep traps in the material. Our findings indicate that shallowtraps originate from electrostatic potential fluctuations generated by chargesfixed in the deep traps.

Band-like transport and trapping in TMTSF Single Crystal Transistors