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We report the first experimental evidence for a strong electromechanicalcoupling in the Mott insulator GaTa4Se8 allowing a highly reproduciblenano-writing with a Scanning Tunneling Microscope (STM). The local electricfield across the STM junction is observed to have a threshold value above whichthe clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltagebiases V > 1.1V the surface suddenly inflates and comes in contact with the STMtip, resulting in nanometer size craters. The formed pattern can beindestructibly "read" by STM at lower voltage bias, thus allowing a 5Tdots/inch2 dense writing/reading at room temperature. The discovery of theelectromechanical coupling in GaTa4Se8 might give new clues in theunderstanding of the Electric Pulse Induced Resistive Switching recentlyobserved in this stoechiometric Mott insulator.

Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides