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Copper nanolines fabricated by the damascene process are commonly used asinterconnects in advanced electronic devices. The copper resistivity increasesabove the bulk value because of confinement, in detriment of performance.Recent electronic transport measurements clearly exhibit this effect fornanolines whose widths range between 80 and 500 nm at low and roomtemperatures. An interpretation in terms of finite size effects that considersemiclassical models for electron-surface and grain-boundary scattering waspresented, but the fits do not capture the strong linewidth dependence in thedata below 100 nm. The present letter explains how the excess resistivityarises from a quantum mechanical surface roughness effect that begins tocontribute strongly in lines narrower than the mean free path. This type ofroughness scattering would contribute a 40% increase in resistivity for future20 nm-interconnects.

Influence of quantum-mechanical boundary roughness resistance on copper nanolines