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We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaNsurface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PLspectra show a redshift with decreasing SQW width, in contrast to the blueshiftnormally observed for conventional GaN QW's of the same width. The effect isattributed to a strong coupling of SQW confined exciton states with surfaceacceptors. The PL hence originates from the recombination ofsurface-acceptor-bound excitons. Two types of acceptors were identified.

Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states