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We perform a theoretical investigation on the Goos-H\"achen (GH) shift inone-dimensional photonic crystals (1DPCs) containing left-handed metamaterials(LHMs). We find an unusal effect of the GH shift near the photonicband-crossing structure, which is located at the condition, $%-k_{z}^{(A)}d_{A}=k_{z}^{(B)}d_{B}=m\pi $ $(m=1,2,3...)$, under the inclinedincident angle, here A denotes the LHM layer and B denotes the dielectriclayer. Above the frequency of the band-crossing point (BCP), the GH shiftchanges from negative to positive as the incident angle increases, while the GHshift changes reversely below the BCP frequency. This effect is explained interms of the phase property of the band-crossing structure.

The reversibility of the Goos-H\"anchen shift near the band-crossing  structure of one-dimemsional photonic crystals containing left-handed  metamaterials