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We study electron-phonon interaction induced decoherence between two-electronsinglet and triplet states in a semiconductor double quantum dot using aspin-boson model. We investigate the onset and time evolution of thisdephasing, and study its dependence on quantum dot parameters such as dot sizeand double dot separations, as well as the host materials (GaAs and Si). Wefind that electron-phonon interaction causes an initial Gaussian decay of theoff-diagonal density matrix element in the singlet-triplet Hilbert space, and along-time exponential decay originating from phonon relaxation.

Dephasing of two-spin states by electron-phonon interaction in semiconductor nanostructures: Spin-boson model with a dissipative reservoir