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A simple model of circular polarization dependence on Mn delta-layer positionin LED heterostructures with InGaAs/GaAs quantum well is proposed, being ableto explain quite accurately recent fascinating experimental results [S.V.Zaitsev, et al., Physica E (2009), doi:10.1016/j.physe.2008.11.003]. The modelemphasizes the role of position-dependent exchange interaction between injectedholes and Mn spins which significantly affects the hole level splitting in amagnetic field, leading to strong variations of polarization dependence. Therole of effective temperature corresponding to the injected hole energy and thebroadening caused by the geometrical structure imperfections is also discussed.

Model of circular polarization dependence on Mn delta-layer position in LED heterostructures with InGaAs/GaAs quantum well