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We have investigated ultrafast carriers dynamics in crystalline siliconnano-pillars structure using a pump-probe reflectivity method with 800 nm, 150fs laser pulses and fluence in the range of {17 - 170} mJ/cm^2. Dimensions ofthe structure allow us to eliminate contribution from the diffusion process tothe relaxation dynamics of the excited carriers. Strong intensity-dependenttime-resolved reflectivity change, \Delta R(\tau_d), was monitored in thesubmelting regime. At strong pumping \Delta R(\tau_d) can reach up to 8%, aseveral times higher than for a bulk silicon. From the measurements we deducedrecombination time of up to 10 ns at carriers density of ~1 x 10^20 cm^-3,while electron-phonon interaction occurs during 350-400 fs and it isindependent of the concentration.

Diffusion-free ultrafast carrier dynamics in silicon nano-pillars