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We explore a planar GaAs/AlAs photonic microcavity using pump-probespectroscopy. Free carriers are excited in the GaAs with short pump pulses. Thetime-resolved reflectivity is spectrally resolved short probe pulses. We showexperimentally that the cavity resonance and its width depend on the dynamicrefractive index of both the lambda-slab and the lambda/4 GaAs mirrors. Weclearly observe a double exponential relaxation of both the the cavityresonance and its width, which is due to the different recombination timescalesin the lambda-slab and the mirrors. In particular, the relaxation time due tothe GaAs mirrors approaches the photon storage time of the cavity, a regime forwhich nonlinear effects have been predicted. The strongly non-singleexponential behavior of the resonance and the width is in excellent agreementto a transfer-matrix model taking into account two recombination times. Thechange in width leads to a change in reflectivity modulation depth. The modelpredicts an optimal cavity Q for any given induced carrier density, if themodulation depth is to be maximized.

Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity