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An oscillatory dependence of the drain current on the drain voltage is foundin a nanostructure consisting of two crossing semiconductor carbon nanotubesthat are suspended over a dielectric trench, which is backed by a doped siliconsubstrate that acts as a gate. Alternating positive and negative differentialresistance regions are generated as a function of the drain source values andcan be slightly shifted by the gate voltage. Moreover, the negativedifferential resistance is retrieved in a large bandwidth, of up to 100 MHz,when the structure is excited with ac signals.

Current Oscillations and Negative Resistances in Crossed Carbon Nanotubes Suspended Over a Dielectric Trench