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A first-principle model is proposed to study the electrostatic properties ofa double-gated silicon slab of nano scale in the framework of densityfunctional theory. The applied gate voltage is approximated as a variation ofthe electrostatic potential on the boundary of the supercell enclosing thesystem. With the electron density estimated by the real space Green'sfunctions, efficient multigrid and fast Fourier Poisson solvers are employed tocalculate the electrostatic potential from the charge density. In therepresentation of localized SIESTA linear combination of atomic orbitals, theKohn-Sham equation is established and solved self-consistently for thewavefunction of the system in the local density approximation. The transmissionfor ballistic transport across the atomic silicon slab at small bias iscalculated. The charge distribution and electrostatic potential profile in thesilicon slab versus the gate voltage are then analyzed with the help of theequivalent capacitive model. Quantum confinement and short gate effects areobserved and discussed.

Atomistic modeling of the electrostatic and transport properties of a simplified nanoscale field effect transistor