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Ion energy distributions have been determined at the rf-bias electrode in aninductively-coupled acetylene-argon plasma for various substrate bias voltagesand frequencies under conditions suitable for film deposition. These arecompared with those obtained at the grounded wall of a capacitively coupledplasma. In the former, for pressures up to 25 mTorr, the IEDs exhibit bimodalstructures with peak separation values that follow the expected dependence onvoltage and frequency. At higher pressures, 120 mTorr, the bimodal structure isreplaced by a single peak. For all conditions, the dominant ion is Ar+ or ArH+despite a set C2H2:Ar flow ratio of 2:1, and this can be attributed to the highelectron dissociation of the parent molecule. Diamond-like carbon filmsindicate a peak hardness at an ion energy of around 90 eV and a very sharp fallin hardness is noted beyond this value. This is similar to the observedbombardment energy relationship for sp3 bond formation in hydrogen-freetetragonal amorphous carbon or bias-sputtered films. However, due to the lackof carbon-based ions, an alternative film growth mechanism must be considered,possibly based on argon knock-on implantation of surface adsorbed carbonspecies. The results have shown that the use of high frequency bias or biasharmonics may lead to much narrower ion energy distributions.

Acetylene - Argon Plasmas Measured at a Biased Substrate Electrode for Diamond-Like Carbon Deposition. Part 2: Ion Energy Distributions