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We applied soft X-ray absorption spectroscopy to study the Ti L-edge inferroelectric capacitors using a modified total electron yield method. Theinner photo currents and the X-ray absorption spectra were polarization statedependent. The results are explained on the basis of photo electric effects andthe inner potential in the ferroelectric capacitors as a result of back-to-backSchottky barriers superimposed by the potential due to the depolarizationfield. In general, the presented method offers the opportunity to investigatethe electronic structure of buried metal-insulator and metal-semiconductorinterfaces in thin film devices. Corresponding author:h.h.kohlstedt@fz-juelich.de

Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy