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In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations: Zn-terminated andSe-terminated. The electronic structure of the junctions is modeled by asecond-nearest neighbors {\it spd} tight-binding Hamiltonian parametrized to{\it ab initio} calculated band structures, while the conductances and thetunneling magnetoresistance are calculated within Landauer's formalism. Thecalculations are done at zero bias voltage and as a function of energy. We showand discuss the influence of the interface structure on the spin-dependenttransport through simple and double tunnel junctions.

Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure