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Hole carrier doping has been tried to pseudo-low-dimensional material La2RuO5by substituting La3+ with Cd2+. Single phased samples of La2-xCdxRuO5 with x upto 0.5 have been successfully obtained and also high pressure O2 annealing hasbeen performed to the x=0.5 sample. Although the formal ionic state of Ru isexpected to increase from 4+ (at x=0) to 4.5+ (at x=0.5), the magnetic andelectrical properties show no significant changes in as-sintered samples. Incontrast, high pressure O2 annealed x=0.5 samples show a little reduction ofelectrical resistivity and the decrease of thermoelectric power at 260 K. Fromthese results, it can be speculated that the doped carriers are mostlycompensated by oxygen deficiency in as-sintered samples.

Carrier doping to pseudo-low-dimensional compound La2RuO5