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In a semiconductor heterostructure with type II energy band alignment, thespatial separation between electrons and holes slows down their radiativerecombination. With increasing excitation intensity, Auger recombinationquickly becomes the dominate recombination channel, and it produces carrierejection from the quantum well. Here, we show that in Si/SiGe three-dimensionalnanostructures, this efficient process facilitates the formation of anelectron-hole plasma (EHP) and/or electron-hole droplets (EHDs) in thin Sibarriers separating SiGe clusters. In contrast to conventional, stronglytemperature dependent and slow radiative carrier recombination in bulk Si, thisEHD/EHP luminescence in nanometer-thick Si layers is found to be nearlytemperature independent with radiative lifetime approaching 10^-8 s, which isonly slightly slower than that found in direct band gap III-V semiconductors.

Auger-mediated radiative recombination in three-dimensional silicon/silicon-germanium nanostructures