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We describe here the first comprehensive investigation of a pyroelectricresponse of a p-n junction in a non-polar paraelectric semiconductor. Thepyroelectric effect is generated by the, temperature dependent, built-inelectrical dipole moment. High quality PbTe p-n junctions have been preparedspecifically for this experiment. The pyroelectric effect was excited by acontinuous CO2 laser beam, modulated by a mechanical chopper. The shape andamplitude of the periodic and single-pulse pyroelectric signals were studied asa function of temperature (10K-130K), reverse bias voltage (up to -500 mV) andchopping frequency (4Hz-2000Hz). The pyroelectric coefficient is about 10^(-3)microC/cm2K in the temperature region 40 - 80 K. The developed theoreticalmodel quantitatively describes all the experimental features of the observedpyroelectric effect. The time evolution of the temperature within the p-njunction was reconstructed.

Experimental and Theoretical Investigation of the Barrier Pyroelectric Effect in a Quantum Paraelectric Semiconductor