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In this paper we present a novel, quadruple well process developed in amodern 0.18mu CMOS technology called INMAPS. On top of the standard process, wehave added a deep P implant that can be used to form a deep P-well and providescreening of N-wells from the P-doped epitaxial layer. This prevents thecollection of radiation-induced charge by unrelated N-wells, typically oneswhere PMOS transistors are integrated. The design of a sensor specificallytailored to a particle physics experiment is presented, where each 50mu pixelhas over 150 PMOS and NMOS transistors. The sensor has been fabricated in theINMAPS process and first experimental evidence of the effectiveness of thisprocess on charge collection is presented, showing a significant improvement inefficiency.

Monolithic Active Pixel Sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels