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In the paper, PRB {\bf 77}, 085118 (2008), the authors conclude that theobservation of Ti-doping induced half-metallicity in SrRu$_{1-x}$TI$_x$O$_3$within the limit of local density approximations is not valid as theexperimental results indicate insulating behavior. It was described that themetal-insulator transition (MIT) at x = 0.5 observed in this system appears dueto the enhancement of on-site Coulomb repulsion strength, U with Tisubstitutions, x. The MIT primarily depends on U and partially on x and/ordisorder. All these conclusions are in sharp contrast to the experimentalobservations, which predicted Anderson insulating phase at x = 0.5 (finitelocalized density of states at the Fermi level). The hard gap due to electroncorrelation appears at much higher x (~ 0.8). In addition, it is wellestablished that homovalent substitution has negligible influence on on-site$U$ (a local variable). These inconsistencies appear due to the fact that thecalculated results representing the bulk electronic structure are compared withthe experimental results dominated by surface contributions. The experimentalbulk spectra, already available in the literature exhibit finite density ofstates at the Fermi level even for x >= 0.5 sample, which suggests that theconclusion of half metallic phase in an earlier study is reasonable. Thus, theinsulator to metal transition in these systems is driven by bandwidth, W ratherthan U and disorder plays dominant role in the metal-insulator transition. Oneneeds to consider the bulk spectra to reproduce numerically the bulk electronicstructure.

Comment on "Electronic structure and orbital ordering of SrRu$_{1-x}$Ti$_x$O$_3$: GGA+U investigations"