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InAs nanowires have been actively explored as the channel material for highperformance transistors owing to their high electron mobility and ease of ohmicmetal contact formation. The catalytic growth of non-epitaxial InAs nanowires,however, has often relied on the use of Au colloids which is non-CMOScompatible. Here, we demonstrate the successful synthesis of high yield ofcrystalline InAs nanowires with high yield and tunable diameters by using Ninanoparticles as the catalyst material on amorphous SiO2 substrates. Thenanowires show superb electrical properties with field-effect electron mobility~2,700 cm2/Vs and ION/IOFF >103. The uniformity and purity of the grown InAsnanowires are further demonstrated by large-scale assembly of parallel arraysof nanowires on substrates via the contact printing process that enables highperformance, printable transistors, capable of delivering 5-10 mA ON currents(~400 nanowires).

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires