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The physics of the "Pi" phase shift in ferromagnetic Josephson junctionsenables a range of applications for spin-electronic devices and quantumcomputing. In this respect our research is devoted to the evaluation of thebest materials for the development and the realization of the quantum devicesbased on superconductors and at the same point towards the reduction of thesize of the employed heterostructures towards and below nano-scale. In thischapter we report our investigation of transitions from "0" to "Pi" states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni$_{80}$Fe$_{20}$ (Py) and Fe. We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb $\pi$-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation. In agreement with the theoretical model we estimate, fromthe oscillations of the critical current as function of the ferromagneticbarrier thickness, the exchange energy of the ferromagnetic material and weobtain that it is close to bulk ferromagnetic materials implying that theferromagnet is clean and S/F roughness is minimal. We conclude that S/F/SJosephson junctions are viable structures in the development ofsuperconductor-based quantum electronic devices; in particular Nb/Co/Nb andNb/Fe/Nb multilayers with their low value of the magnetic dead layer and highvalue of the exchange energy can readily be used in controllable two-levelquantum information systems. In this respect, we discuss applications of ournano-junctions to engineering magnetoresistive devices such as programmablepseudo-spin-valve Josephson structures.

Electrical and magnetic properties of nano-scale Pi-junctions