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At interfaces between polar and nonpolar perovskite oxides, an unusualelectron-doping has been previously observed, due to electronicreconstructions. We report on remote hole-doping at an interface composed ofonly polar layers, revealed by high-resolution hard x-ray core-levelphotoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadiumvalence systematically evolves from the bulk value of V3+ to higher oxidationstates with decreasing LaAlO3 cap layer thickness. These results provide asynthetic approach to hole-doping transition metal oxide heterointerfaceswithout invoking a polar discontinuity.

Remote hole-doping of Mott insulators on the nanometer scale