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This work reports theoretical and experimental study of the X-ray absorptionnear-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magneticsemiconductors. The spectra have been calculated from the first-principlesusing FLAPW including the core-hole effect, a special attention has been paidto consequences of coexistence of Mn impurities in substitutional andtetrahedral interstitial positions. We have performed quantitative componentanalysis of experimental spectra collected on the (Ga,Mn)As samplesbefore/after annealing and etching, with the aim to determine the proportion ofMn impurity configurations. Comparison of the experimental data withtheoretical computations indicates that even after annealing and etching someMn atoms still reside in interstitial sites, although the concentration ofinterstitial defects has been reduced by annealing.

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As