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Motivated by observation of very high tunnel magnetoresistance (TMR) inFe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model forthese devices based on a single-band tight-binding approximation. An effort ismade to capture the band dispersions over the two dimensional transverseBrillouin zone. In the transport direction, spin dependent Hamiltonian isprescribed for Delta_1 and Delta_5 bands. Non-equilibrium Green's functionformalism is then used to calculate transport. Features like voltage dependenceof TMR are captured quantitatively within this simple model and the trendsmatch well with the ones predicted by ab-initio methods and experiments.

Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices